QR kód

Study on Surge Capacity of SiC MOSFET Based on Channel State

The reliability of the SiC MOSFET body diode has been greatly improved due to technological progress, and it has replaced freewheeling diodes in some fields and modules. Based on the surge current test, the non-repetitive surge current characteristics of SiC MOSFET body diode under different channel...

Celý popis

Uloženo v:
Podrobná bibliografie
Hlavní autoři: Heli MENG, Erping DENG, Wenjie WANG, Yongzhang HUANG
Médium: Artigo
Jazyk:Chinês
Vydáno: Editorial Department of Electric Drive for Locomotives 2021-09-01
Edice:机车电传动
Témata:
On-line přístup:http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2021.05.010
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!