R&D of 3 300V SiC MOSFET With Embedded SBD
In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky contact. The optimized surface treatment procedure a...
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| Autori principali: | , , , |
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| Natura: | Artigo |
| Lingua: | Chinês |
| Pubblicazione: |
State Grid Energy Research Institute
2021-12-01
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| Serie: | Zhongguo dianli |
| Soggetti: | |
| Accesso online: | https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202107055 |
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