Development of 1 700 V SiC SBD Device
It presented the structure design, manufacture technology and static performance test of 1 700 V SiC SBD devices. The epitaxy material structure and device structure were obtained by simulation,two key processes including passivation and metalation were analyzed and optimized. Forward and reverse st...
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| Autori principali: | , , , |
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| Natura: | Artigo |
| Lingua: | Chinês |
| Pubblicazione: |
Editorial Office of Control and Information Technology
2016-01-01
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| Serie: | Kongzhi Yu Xinxi Jishu |
| Soggetti: | |
| Accesso online: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.010 |
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