Development of 1 700 V SiC SBD Device
It presented the structure design, manufacture technology and static performance test of 1 700 V SiC SBD devices. The epitaxy material structure and device structure were obtained by simulation,two key processes including passivation and metalation were analyzed and optimized. Forward and reverse st...
Guardat en:
| Autors principals: | , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Chinês |
| Publicat: |
Editorial Office of Control and Information Technology
2016-01-01
|
| Col·lecció: | Kongzhi Yu Xinxi Jishu |
| Matèries: | |
| Accés en línia: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.010 |
| Etiquetes: |
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|