Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications

The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can overcome limitations in complicated circuit design and power dissipation associated with SiC BJTbased techno...

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Autors principals:	Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2025-01-01
Col·lecció:	IEEE Journal of the Electron Devices Society
Matèries:	Silicon carbide (SiC) 4H-SiC MOSFET high-temperature integrated circuit (IC) gate driver high power
Accés en línia:	https://ieeexplore.ieee.org/document/10908627/
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