Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications
GaN-based high-electron mobility transistors (HEMTs) have brought unprecedented performance in terms of power, frequency, and efficiency. Application of metal-insulator-semiconductor (MIS) gate structure has enabled further development of these devices by improving the gate leakage characteristics,...
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| Formato: | Artigo |
| Idioma: | Inglês |
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MDPI AG
2020-12-01
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| Series: | Crystals |
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| Acceso en liña: | https://www.mdpi.com/2073-4352/10/12/1153 |
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