Cathodoluminescence of Ultrathin InAs Layers Embedded in GaAs Matrix
Ultrathin InAs layers with different thicknesses, from 0.75 to 1.4 monolayer, are grown in the GaAs matrix by molecular beam epitaxy on GaAs (001) substrates. For sub-monolayer heterostructures, islands or segregations exist during the growth process. Taking advantage of the high spatial resolution...
Tallennettuna:
| Päätekijät: | , , , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI AG
2022-08-01
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| Sarja: | Crystals |
| Aiheet: | |
| Linkit: | https://www.mdpi.com/2073-4352/12/9/1225 |
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