Cathodoluminescence of Ultrathin InAs Layers Embedded in GaAs Matrix

Ultrathin InAs layers with different thicknesses, from 0.75 to 1.4 monolayer, are grown in the GaAs matrix by molecular beam epitaxy on GaAs (001) substrates. For sub-monolayer heterostructures, islands or segregations exist during the growth process. Taking advantage of the high spatial resolution...

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Autors principals:	Qigeng Yan, Siyuan Wang, Xiaojin Guan, Lei He, Kesheng Sun, Baolai Liang
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2022-08-01
Col·lecció:	Crystals
Matèries:	cathodoluminescence ultrathin InAs nanostructures III-V heterostructures
Accés en línia:	https://www.mdpi.com/2073-4352/12/9/1225
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