Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems
Abstract The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies. Ferroelectric memories, such as Ferroelectric Random Access Memories (FeRAM) and the Ferroelectric Field Ef...
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| Principais autores: | , , , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Wiley-VCH
2025-05-01
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| Serier: | Advanced Electronic Materials |
| Fag: | |
| Online adgang: | https://doi.org/10.1002/aelm.202400686 |
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