Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture
Ferroelectric (FE) hafnium zirconium oxide (HZO) is an excellent candidate for data storage applications. However, it has some reliability limitations such as imprint and retention. Herein, we explore Al doping of HZO to overcome these limitations. FE behavior is tuned by the aluminum (Al) concentra...
Gardado en:
| Principais autores: | , , , , , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Elsevier
2024-08-01
|
| Series: | Memories - Materials, Devices, Circuits and Systems |
| Assuntos: | |
| Acceso en liña: | http://www.sciencedirect.com/science/article/pii/S2773064624000124 |
| Tags: |
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|