Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture

Ferroelectric (FE) hafnium zirconium oxide (HZO) is an excellent candidate for data storage applications. However, it has some reliability limitations such as imprint and retention. Herein, we explore Al doping of HZO to overcome these limitations. FE behavior is tuned by the aluminum (Al) concentra...

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Hlavní autoři:	Ayse Sünbül, David Lehninger, Amir Pourjafar, Shouzhuo Yang, Franz Müller, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Lukas Eng, Maximilian Lederer
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Elsevier 2024-08-01
Edice:	Memories - Materials, Devices, Circuits and Systems
Témata:	Ferroelectric Hafnium oxide Crystallographic texture Scaling
On-line přístup:	http://www.sciencedirect.com/science/article/pii/S2773064624000124
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