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BL-PIM: Varying the Burst Length to Realize the All-Bank Performance and Minimize the Multi-Workload Interference for in-DRAM PIM

As the demand for transformer applications increases rapidly, technologies to solve memory bottlenecks are attracting attention. One of them is an in-DRAM Processing-In-Memory (PIM) architecture to perform the computation inside DRAM. Major DRAM makers introduce the PIM samples, executing all banks&...

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Hlavní autoři: Chang Hyun Kim, Won Jun Lee, Yoonah Paik, Seok Young Kim, Seon Wook Kim
Médium: Artigo
Jazyk:Inglês
Vydáno: IEEE 2023-01-01
Edice:IEEE Access
Témata:
On-line přístup:https://ieeexplore.ieee.org/document/10198428/
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