QR code

Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al<sub>0.24</sub>Ga<sub>0.76</sub>N

A wet-etching technique based on a mixture of hydrochloric (HCl) and nitric (HNO<sub>3</sub>) acids is introduced, demonstrating exceptional 42:1 selectivity for etching N-polar GaN over Al<sub>0.24</sub>Ga<sub>0.76</sub>N. In the absence of an AlGaN etch stop layer, the etchant primarily targets N-...

Volledige beschrijving

Bewaard in:
Hoofdauteurs: Emmanuel Kayede, Emre Akso, Brian Romanczyk, Nirupam Hatui, Islam Sayed, Kamruzzaman Khan, Henry Collins, Stacia Keller, Umesh K. Mishra
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: MDPI AG 2024-05-01
Reeks:Crystals
Onderwerpen:
wet etching
N-polar GaN
AlGaN
HEMT
n+ GaN regrowth
Online toegang:https://www.mdpi.com/2073-4352/14/6/485
Tags: Voeg label toe
Geen labels, Wees de eerste die dit record labelt!

Gelijkaardige items