Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al<sub>0.24</sub>Ga<sub>0.76</sub>N
A wet-etching technique based on a mixture of hydrochloric (HCl) and nitric (HNO<sub>3</sub>) acids is introduced, demonstrating exceptional 42:1 selectivity for etching N-polar GaN over Al<sub>0.24</sub>Ga<sub>0.76</sub>N. In the absence of an AlGaN etch stop layer, the etchant primarily targets N-...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , , , , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
MDPI AG
2024-05-01
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| Цуврал: | Crystals |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.mdpi.com/2073-4352/14/6/485 |
| Шошгууд: |
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