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Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al<sub>0.24</sub>Ga<sub>0.76</sub>N

A wet-etching technique based on a mixture of hydrochloric (HCl) and nitric (HNO<sub>3</sub>) acids is introduced, demonstrating exceptional 42:1 selectivity for etching N-polar GaN over Al<sub>0.24</sub>Ga<sub>0.76</sub>N. In the absence of an AlGaN etch stop layer, the etchant primarily targets N-...

Deskribapen osoa

Gorde:
Egile Nagusiak: Emmanuel Kayede, Emre Akso, Brian Romanczyk, Nirupam Hatui, Islam Sayed, Kamruzzaman Khan, Henry Collins, Stacia Keller, Umesh K. Mishra
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: MDPI AG 2024-05-01
Saila:Crystals
Gaiak:
wet etching
N-polar GaN
AlGaN
HEMT
n+ GaN regrowth
Sarrera elektronikoa:https://www.mdpi.com/2073-4352/14/6/485
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