Step-necking growth of silicon nanowire channels for high performance field effect transistors
Abstract Ultrathin silicon nanowires (diameter <30 nm) with strong electrostatic control are ideal quasi-1D channel materials for high-performance field effect transistors, while a short channel is desirable to enhance driving current. Typically, the patterning of such delicate channels relies on hi...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Portfolio
2025-01-01
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| coleção: | Nature Communications |
| Acesso em linha: | https://doi.org/10.1038/s41467-025-56376-x |
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