Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors

Abstract The transport and noise properties of fabricated, high‐performance, gate‐all‐around silicon liquid‐gated nanowire field‐effect transistor devices are investigated in different concentrations of MgCl2 solutions. The critical concentration of MgCl2 solution for charge inversion at the solid‐l...

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Bibliografische gegevens

Hoofdauteurs:	Yongqiang Zhang, Nazarii Boichuk, Denys Pustovyi, Valeriia Chekubasheva, Hanlin Long, Mykhailo Petrychuk, Svetlana Vitusevich
Formaat:	Artigo
Taal:	Inglês
Gepubliceerd in:	Wiley-VCH 2023-12-01
Reeks:	Advanced Materials Interfaces
Onderwerpen:	equivalent input noise GAA (gate‐all‐around) Hooge parameter ion behavior nanowire field‐effect transistors noise spectroscopy
Online toegang:	https://doi.org/10.1002/admi.202300585
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