Electric Transport in Few-Layer ReSe₂ Transistors Modulated by Air Pressure and Light

We report the fabrication and optoelectronic characterization of field-effect transistors (FETs) based on few-layer ReSe₂. The devices show n-type conduction due to the Cr contacts that form low Schottky barriers with the ReSe₂ nanosheet. We show that the optoelectronic perform...

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Autori principali:	Enver Faella, Kimberly Intonti, Loredana Viscardi, Filippo Giubileo, Arun Kumar, Hoi Tung Lam, Konstantinos Anastasiou, Monica F. Craciun, Saverio Russo, Antonio Di Bartolomeo
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	MDPI AG 2022-05-01
Serie:	Nanomaterials
Soggetti:	2D materials rhenium selenides ReSe<sub>2</sub> field-effect transistor pressure
Accesso online:	https://www.mdpi.com/2079-4991/12/11/1886
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