Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors

Abstract Black phosphorus (bP) is one of the more recently discovered layered materials. Utilizing the hysteresis in the transfer characteristics of bP field‐effect transistors (FETs), several approaches to realize non‐volatile memory devices are successfully demonstrated. This hysteresis is commonl...

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Bibliografische gegevens

Hoofdauteurs:	Stephan Sleziona, Osamah Kharsah, Lucia Skopinski, Leon Daniel, Jennifer Schmeink, Marika Schleberger
Formaat:	Artigo
Taal:	Inglês
Gepubliceerd in:	Wiley-VCH 2025-02-01
Reeks:	Advanced Electronic Materials
Onderwerpen:	2D materials black phosphorus defects field‐effect transistor ion irradiation non‐volatile memory device
Online toegang:	https://doi.org/10.1002/aelm.202400318
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