Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors
Abstract Black phosphorus (bP) is one of the more recently discovered layered materials. Utilizing the hysteresis in the transfer characteristics of bP field‐effect transistors (FETs), several approaches to realize non‐volatile memory devices are successfully demonstrated. This hysteresis is commonl...
Kaydedildi:
| Asıl Yazarlar: | , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Wiley-VCH
2025-02-01
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| Seri Bilgileri: | Advanced Electronic Materials |
| Konular: | |
| Online Erişim: | https://doi.org/10.1002/aelm.202400318 |
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