Enhanced non-volatile resistive switching performance through ion-assisted magnetron sputtering of TiN bottom electrodes
Abstract Emerging non-volatile memristor-based devices with resistive switching (RS) materials are being widely researched as promising contenders for the next generation of data storage and neuromorphic technologies. Titanium nitride (TiNx) is a common industry-friendly electrode system for RS; how...
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| Główni autorzy: | , , , , , , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Nature Portfolio
2025-04-01
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| Seria: | Communications Materials |
| Dostęp online: | https://doi.org/10.1038/s43246-025-00798-z |
| Etykiety: |
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