Enhanced non-volatile resistive switching performance through ion-assisted magnetron sputtering of TiN bottom electrodes

Abstract Emerging non-volatile memristor-based devices with resistive switching (RS) materials are being widely researched as promising contenders for the next generation of data storage and neuromorphic technologies. Titanium nitride (TiNx) is a common industry-friendly electrode system for RS; how...

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Autors principals:	Babak Bakhit, Markus Hellenbrand, Benson Kunhung Tsai, Abhijeet Choudhury, Peter Polcik, Szilard Kolozsvari, Haiyan Wang, Andrew J. Flewitt, Judith L. MacManus-Driscoll
Format:	Artigo
Idioma:	Inglês
Publicat:	Nature Portfolio 2025-04-01
Col·lecció:	Communications Materials
Accés en línia:	https://doi.org/10.1038/s43246-025-00798-z
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