Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2
Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active layer provides the red spectral emission. The 621-nm-wavelength LEDs exhibited high-purity emission with a narrow full-width...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2022-06-01
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| coleção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/5.0097761 |
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