InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors
InGaN based resonant-cavity light-emitting diode (RC-LED) structures with an embedded porous-GaN/n-GaN distributed Bragg reflector (DBR) and a top dielectric Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub> DBR were demonstrated. GaN:Si epitaxial layers with high Si-doping concentration (n<sup>+</sup>-Ga...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
MDPI AG
2020-12-01
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| Цуврал: | Applied Sciences |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.mdpi.com/2076-3417/11/1/8 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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