InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors
InGaN based resonant-cavity light-emitting diode (RC-LED) structures with an embedded porous-GaN/n-GaN distributed Bragg reflector (DBR) and a top dielectric Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub> DBR were demonstrated. GaN:Si epitaxial layers with high Si-doping concentration (n<sup>+</sup>-Ga...
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| Principais autores: | , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI AG
2020-12-01
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| Serier: | Applied Sciences |
| Fag: | |
| Online adgang: | https://www.mdpi.com/2076-3417/11/1/8 |
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