Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide Films
A comparison of the dielectric characteristics (relative permittivity, dielectric loss tangent, band gap, leakage current and breakdown voltage) of hafnium and hafnium-zirconium oxide films was carried out. It is shown that pulsed reactive magnetron sputtering of a Hf target in an Ar/O2 working gas...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Russo |
| Publicado em: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2025-04-01
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| Colecção: | Доклады Белорусского государственного университета информатики и радиоэлектроники |
| Assuntos: | |
| Acesso em linha: | https://doklady.bsuir.by/jour/article/view/4106 |
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