Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide Films

A comparison of the dielectric characteristics (relative permittivity, dielectric loss tangent, band gap, leakage current and breakdown voltage) of hafnium and hafnium-zirconium oxide films was carried out. It is shown that pulsed reactive magnetron sputtering of a Hf target in an Ar/O2 working gas...

Disgrifiad llawn

Manylion Llyfryddiaeth

Prif Awduron:	D. A. Golosov, J. Zhang, S. M. Zavadski, S. N. Melnikov, H. T. Doan, P. A. Alexandrovitch
Fformat:	Artigo
Iaith:	Russo
Cyhoeddwyd:	Educational institution «Belarusian State University of Informatics and Radioelectronics» 2025-04-01
Cyfres:	Доклады Белорусского государственного университета информатики и радиоэлектроники
Pynciau:	thin film hafnium oxide hafnium zirconium oxide reactive magnetron sputtering composite target dielectric properties
Mynediad Ar-lein:	https://doklady.bsuir.by/jour/article/view/4106
Tagiau:	Ychwanegu Tag Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!