Ultrathin Hafnium‐Based Ferroelectric Devices for In‐Memory Computing Applications
ABSTRACT The discovery of ferroelectricity in HfO2‐based ferroelectrics at the ultrathin scale has reignited enthusiasm for ferroelectric memory device research, propelling hafnium‐based ferroelectric devices to the forefront of nanoelectronics research. Simultaneously, the rapid advancement of big...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Wiley
2026-03-01
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| Series: | Information & Functional Materials |
| Assuntos: | |
| Acceso en liña: | https://doi.org/10.1002/ifm2.70010 |
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