Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOI

This paper reports ultrahigh-sensitive and ultralow-power CMOS compatible pH sensors that are developed in the back-end-of-line (BEOL) of industrial 28-nm ultrathin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) transistors. Fabricating the sensing gate and the control gate...

Descripción completa

Detalles Bibliográficos

Autores principales:	Getenet Tesega Ayele, Stephane Monfray, Serge Ecoffey, Frederic Boeuf, Jean-Pierre Cloarec, Dominique Drouin, Abdelkader Souifi
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	IEEE 2018-01-01
Colección:	IEEE Journal of the Electron Devices Society
Materias:	Aluminum oxide back-end-of-line (BEOL) capacitive coupling extended gate fully-depleted silicon-on-insulator (FDSOI) ion-sensitive field-effect transistor (ISFET)
Acceso en línea:	https://ieeexplore.ieee.org/document/8449087/
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!