Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs
In this paper, we report high-performance Micro-LEDs on sapphire substrates, with pixel size scaling to 20 µm and an ultra-high current density of 9902 A/cm<sup>2</sup>. The forward voltages (V<sub>F</sub>) of the devices ranged from 2.32 V to 2.39 V under an injection current density of 10 A/cm<sup...
Kaydedildi:
| Asıl Yazarlar: | , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
MDPI AG
2020-04-01
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| Seri Bilgileri: | Nanomaterials |
| Konular: | |
| Online Erişim: | https://www.mdpi.com/2079-4991/10/4/689 |
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