Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs
In this paper, we report high-performance Micro-LEDs on sapphire substrates, with pixel size scaling to 20 µm and an ultra-high current density of 9902 A/cm<sup>2</sup>. The forward voltages (V<sub>F</sub>) of the devices ranged from 2.32 V to 2.39 V under an injection current density of 10 A/cm<sup...
Enregistré dans:
| Auteurs principaux: | , , , |
|---|---|
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI AG
2020-04-01
|
| Collection: | Nanomaterials |
| Sujets: | |
| Accès en ligne: | https://www.mdpi.com/2079-4991/10/4/689 |
| Tags: |
Pas de tags, Soyez le premier à ajouter un tag!
|