Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology

The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing (SS) is observed as <inline-formula> <tex-mat...

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Bibliografische gegevens

Hoofdauteurs:	Yuxin Liu, Qiang Liu, Jin Chen, Zhiqiang Mu, Xing Wei, Wenjie Yu
Formaat:	Artigo
Taal:	Inglês
Gepubliceerd in:	IEEE 2024-01-01
Reeks:	IEEE Journal of the Electron Devices Society
Onderwerpen:	Kink effect gate-all-around void embedded silicon on insulator substrate average subthreshold swing and hysteresis-free
Online toegang:	https://ieeexplore.ieee.org/document/10714381/
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