Engineering SnSe Isolated State Steep‐Slope MOSFETs for High‐Performance Applications
Abstract To overcome Boltzmann thermal limitation, the study investigates isolated‐state field‐effect transistors based on armchair SnSe nanoribbons using first‐principles calculations and quantum transport simulations with various edge passivation strategies, particularly fluorine (‐F) passivation....
Wedi'i Gadw mewn:
| Prif Awduron: | , , , , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Wiley-VCH
2025-12-01
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| Cyfres: | Advanced Electronic Materials |
| Pynciau: | |
| Mynediad Ar-lein: | https://doi.org/10.1002/aelm.202500573 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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