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Thickness dependent p-n switching in SnSe2/SnOx/SnSe heterojunction-based NO2 gas sensor as well as photodetector

SnSe2/SnOx/SnSe heterojunction thin films with different thicknesses 137, 241 and 297 nm were fabricated via the thermal evaporation technique. XRD, FESEM, Raman spectroscopy, XPS, and U–V visible spectroscopy were used to study the structural, morphological, chemical, and optical properties of the...

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Bibliografische gegevens
Hoofdauteurs: Sanju Rani, Manoj Kumar, Parveen Garg, Reena Yadav, Yogesh Singh, Ashish Kumar, Bal Govind, Uday Deshpande, Sudhir Hausale, Vidya Nand Singh
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: Elsevier 2023-09-01
Reeks:Journal of Science: Advanced Materials and Devices
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Online toegang:http://www.sciencedirect.com/science/article/pii/S2468217923000527
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