Engineering SnSe Isolated State Steep‐Slope MOSFETs for High‐Performance Applications

Abstract To overcome Boltzmann thermal limitation, the study investigates isolated‐state field‐effect transistors based on armchair SnSe nanoribbons using first‐principles calculations and quantum transport simulations with various edge passivation strategies, particularly fluorine (‐F) passivation....

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Autori principali:	Lu Qin, Juan Lyu, Shenyuan Yang, Shun Song, Jian Gong
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Wiley-VCH 2025-12-01
Serie:	Advanced Electronic Materials
Soggetti:	first‐principle calculation gate‐all‐around isolated state material MOSFET steep subthreshold swing
Accesso online:	https://doi.org/10.1002/aelm.202500573
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