The effects of the post-annealing with a Zn cap on the structural and electrical properties of sol-gel derived MgxZn1−xO films
Structural and electrical properties of Al-doped Mg _x Zn _1−x O films were improved by post-annealing with supplying Zn vapor. The Al-doped Mg _x Zn _1−x O films were deposited on glass substrates by a sol-gel method. The substrates were dip-coated with a precursor solution and were dried on a hotp...
Guardat en:
| Autors principals: | , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IOP Publishing
2021-01-01
|
| Col·lecció: | Materials Research Express |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1088/2053-1591/abe5f2 |
| Etiquetes: |
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|