The effects of the post-annealing with a Zn cap on the structural and electrical properties of sol-gel derived MgxZn1−xO films
Structural and electrical properties of Al-doped Mg _x Zn _1−x O films were improved by post-annealing with supplying Zn vapor. The Al-doped Mg _x Zn _1−x O films were deposited on glass substrates by a sol-gel method. The substrates were dip-coated with a precursor solution and were dried on a hotp...
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| Hauptverfasser: | , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
IOP Publishing
2021-01-01
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| Schriftenreihe: | Materials Research Express |
| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.1088/2053-1591/abe5f2 |
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