The effects of the post-annealing with a Zn cap on the structural and electrical properties of sol-gel derived MgxZn1−xO films
Structural and electrical properties of Al-doped Mg _x Zn _1−x O films were improved by post-annealing with supplying Zn vapor. The Al-doped Mg _x Zn _1−x O films were deposited on glass substrates by a sol-gel method. The substrates were dip-coated with a precursor solution and were dried on a hotp...
-д хадгалсан:
| Үндсэн зохиолчид: | , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
IOP Publishing
2021-01-01
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| Цуврал: | Materials Research Express |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://doi.org/10.1088/2053-1591/abe5f2 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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