Switched Low-Noise Amplifier Using Gyrator-Based Matching Network for TD-LTE/LTE-U/Mid-Band 5G and WLAN Applications

This paper presents a triple-band low-noise amplifier (LNA) fabricated using a 0.18 μm Complementary Metal-Oxide-Semiconductor (CMOS) process. The LNA uses a double-peak load network with a switched component to accomplish the triple-band operation. Moreover, noise reduction using a substrate resist...

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Detalhes bibliográficos

Principais autores:	Ching-Han Tsai, Chun-Yi Lin, Ching-Piao Liang, Shyh-Jong Chung, Jenn-Hwan Tarng
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2021-02-01
coleção:	Applied Sciences
Assuntos:	low-noise amplifier 5G triple-band noise reduction
Acesso em linha:	https://www.mdpi.com/2076-3417/11/4/1477
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