Switched Low-Noise Amplifier Using Gyrator-Based Matching Network for TD-LTE/LTE-U/Mid-Band 5G and WLAN Applications

This paper presents a triple-band low-noise amplifier (LNA) fabricated using a 0.18 μm Complementary Metal-Oxide-Semiconductor (CMOS) process. The LNA uses a double-peak load network with a switched component to accomplish the triple-band operation. Moreover, noise reduction using a substrate resist...

詳細記述

書誌詳細

主要な著者:	Ching-Han Tsai, Chun-Yi Lin, Ching-Piao Liang, Shyh-Jong Chung, Jenn-Hwan Tarng
フォーマット:	Artigo
言語:	Inglês
出版事項:	MDPI AG 2021-02-01
シリーズ:	Applied Sciences
主題:	low-noise amplifier 5G triple-band noise reduction
オンライン･アクセス:	https://www.mdpi.com/2076-3417/11/4/1477
タグ:	タグ追加 タグなし, このレコードへの初めてのタグを付けませんか!