Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter

Abstract This study aims to investigate the influence of parasitic capacitances within half-bridge SiC power metal oxide semiconductor field effect transistor (MOSFET) modules, including input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss), on their switching...

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Bibliografiske detaljer

Principais autores:	Hsien-Chie Cheng, Wen-You Jhu, Yan-Cheng Liu, Ching-Feng Yu, Po-Kai Chiu, Tao-Chih Chang
Format:	Artigo
Sprog:	Inglês
Udgivet:	Nature Portfolio 2026-03-01
Serier:	Scientific Reports
Fag:	Parasitic capacitance SiC power module Switching transient Power loss estimation Single-phase inverter Double pulse test
Online adgang:	https://doi.org/10.1038/s41598-026-44458-9
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