Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges
The impact of oxide charges on the metal-insulator-semiconductor (MIS) device’s capacitance <inline-formula> <tex-math notation="LaTeX">$({C})$ </tex-math></inline-formula> and conductance <inline-formula> <tex-math notation="LaTeX">$({G})$ </tex-math></inline-formula> was studied in this wor...
Furkejuvvon:
| Váldodahkkit: | , , , , |
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| Materiálatiipa: | Artigo |
| Giella: | Inglês |
| Almmustuhtton: |
IEEE
2022-01-01
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| Ráidu: | IEEE Journal of the Electron Devices Society |
| Fáttát: | |
| Liŋkkat: | https://ieeexplore.ieee.org/document/9924232/ |
| Fáddágilkorat: |
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