Enhancement of the Transient Current Behavior of MIS Tunnel Diodes With Ultra-Edge-Thickened (UET) Oxide under the Consideration of Tunnel Oxide Areas
In this research, the steady-state and transient behavior of the p-type metal-insulator-semiconductor (MIS) tunnel-diodes (TD) with ultra-edge-thickened (UET) oxide was studied, utilizing experimental results and TCAD simulations. The investigation explores how the gate voltage (VG) influences the g...
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| Principais autores: | , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
IEEE
2025-01-01
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| Serier: | IEEE Journal of the Electron Devices Society |
| Fag: | |
| Online adgang: | https://ieeexplore.ieee.org/document/11079924/ |
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