Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET
The Negative Bias Temperature Instability (NBTI) effect of partially depleted silicon-on-insulator (PDSOI) PMOSFET based on 130 nm is investigated. First, the effect of NBTI on the IV characteristics and parameter degradation of T-Gate PDSOI PMOSFET was investigated by accelerated stress tests. The...
Guardat en:
| Autors principals: | , , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2022-05-01
|
| Col·lecció: | Micromachines |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2072-666X/13/5/808 |
| Etiquetes: |
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|