Investigation of the Combined Effect of Total Ionizing Dose and Time-Dependent Dielectric Breakdown on PDSOI Devices
The combined effect of total ionization dose (TID) and time-dependent dielectric breakdown (TDDB) of partially depleted silicon-on-insulator (PDSOI) NMOSFET is investigated. First, the effect of TDDB on the parameter degradation of the devices was investigated by accelerated stress tests. It is foun...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2022-08-01
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| Colecção: | Micromachines |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2072-666X/13/9/1432 |
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