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Low-Temperature and Low-Pressure Silicon Nitride Deposition by ECR-PECVD for Optical Waveguides

We report on low-temperature and low-pressure deposition conditions of 140 °C and 1.5 mTorr, respectively, to achieve high-optical quality silicon nitride thin films. We deposit the silicon nitride films using an electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) cha...

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Principais autores: Dawson B. Bonneville, Jeremy W. Miller, Caitlin Smyth, Peter Mascher, Jonathan D. B. Bradley
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2021-02-01
Serier:Applied Sciences
Fag:
chemical vapour deposition silicon nitride
optical waveguides
Online adgang:https://www.mdpi.com/2076-3417/11/5/2110
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