Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique
Abstract We investigated the growth and evolution of Si-based Ge quantum dots (Ge/Si QDs) under low Ge deposition (1.2–4.4 nm thick) using magnetron sputtering. The morphology and structure of QDs were analyzed with the help of an atomic force microscope (AFM), scanning electron microscope, transmis...
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| Autori principali: | , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Portfolio
2023-05-01
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| Serie: | Scientific Reports |
| Accesso online: | https://doi.org/10.1038/s41598-023-34284-8 |
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