Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and s...

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Autori principali:	Yong Du, Zhenzhen Kong, Muhammet S. Toprak, Guilei Wang, Yuanhao Miao, Buqing Xu, Jiahan Yu, Ben Li, Hongxiao Lin, Jianghao Han, Yan Dong, Wenwu Wang, Henry H. Radamson
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	MDPI AG 2021-04-01
Serie:	Nanomaterials
Soggetti:	Ge optimization parameter threading dislocation strain RPCVD
Accesso online:	https://www.mdpi.com/2079-4991/11/4/928
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