Heteroepitaxial Growth of Ge Nanowires on Si Substrates
Electron beam evaporation has been used to prepare Ge nanowires (NWs) on top of (111) Si substrates. Despite the non-UHV growth conditions, scanning and transmission electron microscopies demonstrate that NWs are single crystal with specific crystallographic growth directions ([111], [110], and [112...
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| Autori principali: | , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Wiley
2012-01-01
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| Serie: | International Journal of Photoenergy |
| Accesso online: | http://dx.doi.org/10.1155/2012/782835 |
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