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Radiation study on the parallel topology of SiC MOSFET and Si IGBT inverter

The electromagnetic radiation interference mechanism from multiple noise sources on the parallel topology of SiC MOSFET and Si IGBT Inverter is blurred, which will seriously affect the high reliability application of the structure. In order to solve this problem, a topological radiation EMI predicti...

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Bibliografiske detaljer
Principais autores: Yuxing Dai, Zijie Zheng, Zishun Peng, Wen Hu, Jun Wang, Zhenxing Zhao, Yachao Yang, Yi Yang
Format: Artigo
Sprog:Inglês
Udgivet: Elsevier 2023-10-01
Serier:Energy Reports
Fag:
Online adgang:http://www.sciencedirect.com/science/article/pii/S235248472300865X
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