Impact of Temperature and Doping on the Performance of <inline-formula><tex-math notation="LaTeX">${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$</tex-math></inline-formula> Heterojunction Phototransistors

We study the effect of temperature and doping in Si-based GeSn heterojunction phototransistors (HPTs) for low-power-consuming, low-cost, and high-speed mid-infrared (MIR) applications. The incorporation of <inline-formula><tex-math notation="LaTeX">${\rm{G}}{{\rm{e}}_{1 - x}}{\rm{S}}{{\rm{n}}_x}$</t...

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Príomhchruthaitheoirí:	Harshvardhan Kumar, Rikmantra Basu, Guo-En Chang
Formáid:	Artigo
Teanga:	Inglês
Foilsithe / Cruthaithe:	IEEE 2020-01-01
Sraith:	IEEE Photonics Journal
Ábhair:	Cut-off frequency doping GeSn alloy heterojunction phototransistor (HPT) responsivity temperature
Rochtain ar líne:	https://ieeexplore.ieee.org/document/9099040/
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